SiGeC Alloys for Optoelectronic Devices.
Annual rept. no. 3 (Final) 1 Sep 93-31 Aug 94,
DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING
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Si1-x-yGexCy alloys have been actively investigated for use in heterojunction devices compatible with Si. Using the following values for the lattice constants of Si, Ge and C aSi0.54309 nm, aGe0.56576 nm and aC0.35667 nm, and assuming Vegards Law we obtain the condition on the ratio of Ge and C atomic fractions for lattice-matching to Si xy 8.2. For Ge1-yCy, binary alloys, the composition Ge0.89C0.11 is predicted to be lattice-matched to silicon. jg p.2
- Properties of Metals and Alloys
- Inorganic Chemistry
- Physical Chemistry