Accession Number:

ADA295007

Title:

SiGeC Alloys for Optoelectronic Devices.

Descriptive Note:

Annual rept. no. 3 (Final) 1 Sep 93-31 Aug 94,

Corporate Author:

DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Kolodzey, James

Report Date:

1995-08-01

Pagination or Media Count:

12.0

Abstract:

Si1-x-yGexCy alloys have been actively investigated for use in heterojunction devices compatible with Si. Using the following values for the lattice constants of Si, Ge and C aSi0.54309 nm, aGe0.56576 nm and aC0.35667 nm, and assuming Vegards Law we obtain the condition on the ratio of Ge and C atomic fractions for lattice-matching to Si xy 8.2. For Ge1-yCy, binary alloys, the composition Ge0.89C0.11 is predicted to be lattice-matched to silicon. jg p.2

Descriptors:

• *HETEROJUNCTIONS
• *CARBON
• *SILICON
• *GERMANIUM
• *BINARY ALLOYS
• RATIOS
• ELECTROOPTICS
• LATTICE DYNAMICS

Subject Categories:

• Properties of Metals and Alloys
• Inorganic Chemistry
• Physical Chemistry
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE