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Accession Number:
ADA295004
Title:
Development of Si Light Emitting Technology Based on Si Quantum Wires.
Descriptive Note:
Final technical rept. 30 Sep 91-31 Mar 94,
Corporate Author:
TEXAS UNIV AT AUSTIN
Report Date:
1994-03-31
Pagination or Media Count:
29.0
Abstract:
The objectives of this program are four folds. 1 Process development develop new techniques to fabricate luminescent PS, control the luminescence spectra, and process PS with minimal damage to the luminescent properties. To that end, we have developed a novel approach to produce luminescent PS without an external electrical bias by stain etching Si in HF-HNO3-based solution. In addition, we have utilized dry oxidation to efficiently control the PL spectrum. Excellent PL selectivity with micrometer resolution was also achieved by protecting Si with a metal or dielectric mask during anodization. 2 Material study characterize the microstructure and physical chemistry of luminescent PS as functions of preparation conditions by microscopic and spectroscopic techniques. 3 PL mechanism study investigate the origin of visible PL in PS by studying quantum-size effects, H-based models, molecular electronics, as well as the effects of surface passivation. 4 Electroluminescence EL devices fabricate and characterize the PS-based EL devices. Surface-emitting and edge-emitting light-emitting diodes LEDs have been fabricated and critically characterized. jg p.3
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
