Accession Number:

ADA295004

Title:

Development of Si Light Emitting Technology Based on Si Quantum Wires.

Descriptive Note:

Final technical rept. 30 Sep 91-31 Mar 94,

Corporate Author:

TEXAS UNIV AT AUSTIN

Personal Author(s):

Report Date:

1994-03-31

Pagination or Media Count:

29.0

Abstract:

The objectives of this program are four folds. 1 Process development develop new techniques to fabricate luminescent PS, control the luminescence spectra, and process PS with minimal damage to the luminescent properties. To that end, we have developed a novel approach to produce luminescent PS without an external electrical bias by stain etching Si in HF-HNO3-based solution. In addition, we have utilized dry oxidation to efficiently control the PL spectrum. Excellent PL selectivity with micrometer resolution was also achieved by protecting Si with a metal or dielectric mask during anodization. 2 Material study characterize the microstructure and physical chemistry of luminescent PS as functions of preparation conditions by microscopic and spectroscopic techniques. 3 PL mechanism study investigate the origin of visible PL in PS by studying quantum-size effects, H-based models, molecular electronics, as well as the effects of surface passivation. 4 Electroluminescence EL devices fabricate and characterize the PS-based EL devices. Surface-emitting and edge-emitting light-emitting diodes LEDs have been fabricated and critically characterized. jg p.3

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE