Accession Number:

ADA295003

Title:

Electron and Hole Transport in Compound Semiconductors.

Descriptive Note:

Final rept.,

Corporate Author:

VIRGINIA UNIV CHARLOTTESVILLE

Personal Author(s):

Report Date:

1995-01-01

Pagination or Media Count:

3.0

Abstract:

We investigated transport properties of InSb and GaSb. We implemented an algorithm for electron-electron scattering in the Monte Carlo simulator, and used this simulator to study the effect of electron-electron scattering at relatively low electric fields. We also developed a program for the calculation of the electron velocity and electron temperature as functions of an electric field. This calculation was based on the moment and energy balance equations. We applied this program to study the heating and drift velocity of electrons in InSb. This method is less time consuming than the Monte Carlo method and more suitable for the implementation in device simulators. We have also calculated numerically the low field mobility due to acoustic and optical phonons, obtaining excellent agreement with our Monte Carlo simulations. Based on these studies, we wrote a program for the calculation of mobilities in all cubic semiconductors and their alloys. The program assumes spherical bands, but accounts for carrier degeneracy, non-parabolicity, and varying screening length. It can be easily modified to account for non-parabolicity.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE