Accession Number:

ADA291824

Title:

Semiconductor Deposition and Etching Interactions of Laser-generated Translationally Hot Atoms and Radicals.

Descriptive Note:

Final rept . 1 Jun 91-31 Dec 94,

Corporate Author:

COLORADO UNIV AT BOULDER

Personal Author(s):

Report Date:

1994-12-31

Pagination or Media Count:

32.0

Abstract:

Laser vaporization of cryogenic films is employed to produce translationally fast atoms and radicals, and these kinetic-energy-enhanced species are used for studies of semiconductor etching the results are important for the basic physics of electronics materials processing. Recent accomplishments include 1 production of a novel source of kinetic-energy-enhanced beams of Cl2, Cl, and F atoms by laser vaporization, 2 observation of substantial enhancement of the etching rate and sustained etching of room temperature Si100 by chlorine molecules with energies or 3 eV, 3 scattering studies of translationally fast Cl2 and Cl with Si100, 4 velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and 5 measurements of SiClx product distributions as a function of substrate temperature. jg

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Laminates and Composite Materials
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE