Accession Number:

ADA291408

Title:

Proceedings of the International Symposium on Integrated Ferroelectrics (5th) Held at Colorado Springs, Colorado on April 1993. Volume 5, Number 3. Part 4.

Descriptive Note:

Corporate Author:

PRINCETON RESOURCES INC NJ

Personal Author(s):

Report Date:

1993-04-01

Pagination or Media Count:

148.0

Abstract:

CONTENTS FERROELECTRIC La-Sr-Co-OPb-La-Zr-Ti-OLa-Sr-Co-O HETEROSTRUCTURES ON SILICON DEVELOPMENT OF FERROELECTRIC PZT THIN FILMS BY THE SOL-GEL TECHNIQUE FOR NON-VOLATILE MEMORY APPLICATIONS THE EFFECT OF DEPOSITION TEMPERATURE ON THE MATERIAL AND ELECTRICAL PROPERTIES OF PZT THIN FILMS FOR ULSI DRAM APPLICATIONS CHARACTERISTICS OF FERROELECTRIC GATE MOS AND MOSFETS FATIGUE AND RETENTION OF PbZr00.53Ti0.47O3 THIN FILM CAPACITORS WITH Pt AND RuO2 ELECTRODES FERROELECTRIC SWITCHING AND FATIGUE BEHAVIOR FOR PZTYBCO THIN FILM HETEROSTRUCTURES FERROELECTRIC SPACE CHARGE NON-DESTRUCTIVE READ-OUT MEMORY ON THE EMISSION DYNAMICS OF PZT FERROELECTRIC CERAMIC MATERIAL COMMENTS ON BREAKDOWN, FATIGUE, AND ULTRASONIC ATTENUATION IN FERROELECTRIC FILMS HIGH-PERMITTIVITY LEAD-BASED PEROVSKITE DIELECTRICS FOR DRAM APPLICATIONS DEPOSITION OF THIN FILM ZnO WITH CHARACTERISTICS CLOSE TO BULK CRYSTAL ZnO GROWTH AND ELECTRICAL PROPERTIES OF PbZr,TiO3 THIN FILMS BY SPUTTERING USING AN ALLOY TARGET and MODELING OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD EFFECT TRANSISTOR SUBTHRESHOLD CURRENT.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE