LNTlSb as a Long-Wave Infrared (LWIR) Material: Defects and Transport Properties.
Final rept. 19 Apr 93-14 Jan 95,
SRI INTERNATIONAL MENLO PARK CA
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We have evaluated three III-V semiconductor alloys as possible candidates for future long-wave infrared LWIR detector materials. The cohesive energies, elastic constants, band structures, electron mobilities, and phase diagrams are calculated and are compared to those of Hg sub 1-xCd sub xTe MCT alloys. All three of these III-V alloys have their band gap change from negative to positive values as the alloy composition x decreases from 1 to 0. The x values for the 0.1-eV gap are estimated to be 0.67,0.15, and 0.08, respectively, for ITP, ITA, and ITS. While ITP and ITA form stable zincblende solid solutions for all alloy compositions, zincblende ITS is stable only for a range of x less than 0.15. ITP and ITA have considerably larger cohesive energies and elastic constants than does MCT, indicating that they are structurally robust. At a 0.1 -eV gap, the band structures near the gap and the electron mobilities in ITP, ITA, and ITS are also found to be comparable to those of MCT. Because the lattice constants of ITP and ITA are less than 2 larger than the respective values in InP and InAs, the latter should provide natural substrates for the growth of active LWIR alloys. MM
- Electrical and Electronic Equipment
- Infrared Detection and Detectors