Accession Number:

ADA291142

Title:

Vacuum Microelectronic Emitters and Their Applications Using Compound Semiconductor Technology

Descriptive Note:

Final rept. 1 Aug 91-31 May 94,

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1994-07-16

Pagination or Media Count:

29.0

Abstract:

Vacuum microelectronic devices VMDs are a class of devices in which electron transport occurs both in semiconductors and in vacuum. They have the potential of combining the advantages of vacuum tube based devices with those of modern semiconductor devices. The key to the success of VMDs is fabricating reliable solid state electron emitters with high emission efficiency and high emission current density. This report will present the design, growth, fabrication and characterization of Planar-Doped-Barrier Electron Emitters PDBEEs made of compound semiconductor AlGaAsGaAs. In PDBEEs, electrons, as majority carriers, are injected over a triangular barrier into a high field region accelerated towards the surface. Injected Electrons gain kinetic energy from the field and lose kinetic energy through scattering processes. Those electrons with enough energy to overcome the surface barrier upon reaching the surface could be emitted into vacuum. The surface work function of semiconductors GaAs in this work is lowered by cesiation. An emission efficiency of 4.2 percent and an emission current density of 5.8 Acm2 have been obtained from Al0.3Ga0.7AsGaAs PDBEEs. MM

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE