Accession Number:

ADA291017

Title:

Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals.

Descriptive Note:

Final rept. 1 Jun 91-31 Dec 94,

Corporate Author:

JOINT INST FOR LAB ASTROPHYSICS BOULDER CO

Personal Author(s):

Report Date:

1994-12-31

Pagination or Media Count:

32.0

Abstract:

Laser vaporization of cryogenic films is employed to produce translationally fast atoms and radicals, and these kinetic-energy-enhanced species are used for studies of semiconductor etching the results are important for the basic physics of electronics materials processing. Recent accomplishments include 1 production of a novel source of kinetic-energy-enhanced beams of Cl2, Cl, and F atoms by laser vaporization, 2 observation of substantial enhancement of the etching rate and sustained etching of room temperature Si100 by chlorine molecules with energies greater than or equal 3 eV, 3 scattering studies of translationally fast Cl2 and Cl with Si100, 4 velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and 5 measurements of SiClx product distributions as a function of substrate temperature. jg

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Inorganic Chemistry
  • Physical Chemistry
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE