Design and Development of Low Noise, High Speed, High Electron Mobility Transistors (HEMTs).
Final rept. 1 May 92-31 Jul 94,
SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
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An investigation was undertaken to design and fabricate low noise, high speed InP-based HEMTs. The investigation consisted of several components the development of quantum corrected hydrodynamics simulation codes application of these codes to aid in design and optimization of HEMTs for low noise, high speed operation and fabrication and testing of the resulting designs. Through the research effort, HEMTs of previously unobtained performance levels were designed and fabricated. These results showed that the use of simulation can play a significant and important role in extracting performance from proposed device Structures, and should be used as an integral part of the design process. jg
- Electrical and Electronic Equipment
- Inorganic Chemistry