Accession Number:

ADA289356

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films.

Descriptive Note:

Quarterly Technical rept. 1 Oct-31 Dec 94,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

• Davis, Robert F.
• Glass, Jeffrey T.
• Nemanich, R. J.

Report Date:

1994-12-01

Pagination or Media Count:

18.0

Abstract:

Bias-enhanced nucleation BEN has been employed with TiC111 substrates for the disposition of oriented diamond particles. The orientation of all the particles was the same, as observed via SEM. Some particles showed evidence of azimuthal twist and tilt, most likely due to the approx. 18 lattice mismatch with the TiC. Raman spectra exhibited a strong feature at 1332 cm-, indicative of diamond, and smaller features at 1480 cm and 1602 cm due to sp2-bonded carbon. An increase in the duration of the BEN step and a reduction in the twinning are expected to increase the density of oriented particles. An optical analysis of the strain fields of point and line defects, and the distributions of these defects as well as the distribution of the optical centers in the diamond films has also been conducted. The nitrogen optical centers were uniformly distributed. Calculations indicated that line-type defects are far more detrimental to the stress than point defects.

Descriptors:

• *FILMS
• *DIAMONDS
• *SINGLE CRYSTALS
• DENSITY
• OPTICAL PROPERTIES
• CARBIDES
• TRANSMISSION LINES
• ELECTRIC FIELDS
• SUBSTRATES
• SEMICONDUCTORS
• POINT DEFECTS
• NITROGEN
• DEFECTS(MATERIALS)
• PARTICLES
• OPTICAL ANALYSIS
• TITANIUM
• AZIMUTH
• RAMAN SPECTRA
• BREAKDOWN(ELECTRONIC THRESHOLD)
• TWIST(MOTION)

Subject Categories:

• Inorganic Chemistry
• Coatings, Colorants and Finishes
• Laminates and Composite Materials
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE