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Boron-induced Morphology Changes in Silicon CVD Growth: A Scanning Tunneling Microscopy Study.
WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY
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Scanning tunneling microscopy has been used to investigate the influence of surface boron on silicon growth via chemical vapor deposition CVD. The presence of boron-induced reconstructions on the Si001 surface dramatically changes the surface morphology during subsequent CVD growth of silicon using disilane at 815 Kelvin. Boron-induced reconstructions inhibit the lateral diffusion of silicon atoms from terraces to step edges, leading to greatly enhanced island nucleation, and also reduce the local surface reactivity toward disilane. Strong segregation of boron to the growth surface allows the enhanced island nucleation to persist to subsequent terraces during multilayer CVD growth of silicon, producing a rough but epitaxial surface.
APPROVED FOR PUBLIC RELEASE