Accession Number:

ADA289265

Title:

Total Ionizing Dose Effects in MOSFET Devices at 77 K.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

• Daul, Kevin J.

Report Date:

1994-12-01

Pagination or Media Count:

126.0

Abstract:

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide RNO MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a Co-60 source, up to 1 MradSi at a dose rate of 107 radsSisec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of the thermal oxide devices. The threshold voltage shifts of the RNO devices were typically less than those for thermal oxide devices.

Descriptors:

• *MOSFET SEMICONDUCTORS
• *RADIATION DAMAGE
• THRESHOLD EFFECTS
• THESES
• OXIDES
• THERMOCHEMISTRY
• DOSE RATE
• CRYOGENICS
• SUBSURFACE
• IONIZING RADIATION
• TRANSISTORS
• TRANSCONDUCTANCE

Subject Categories:

• Nuclear Radiation Shielding, Protection and Safety
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE