Accession Number:

ADA289222

Title:

Boron-Induced Reconstructions of Si(001) Investigated by Scanning Tunneling Microscopy.

Descriptive Note:

Interim technical rept.,

Corporate Author:

WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY

Personal Author(s):

• Wang, Yajun
• Hamers, Robert J.

Report Date:

1994-12-20

Pagination or Media Count:

15.0

Abstract:

The local geometric and electronic structures of boron-induced reconstructions produced by thermal decomposition of diborane and decaborane on Si001 has been investigated using scanning tunneling microscopy. STM images show that boron induces several related reconstructions, arising from ordered arrangements of simple structural subunits. These boron-induced atomic rearrangements order even at very low boron exposures, leading to a striking spatial segregation of boron on the surface. Similar reconstructions are observed using diborane and decaborane as boron precursors. Annealing at 1000 Kelvin for 90 seconds substantially improves the surface ordering, without significant diffusion of boron from the surface to the bulk.

Descriptors:

• *SILICON
• *BORON
• SCANNING
• THERMAL PROPERTIES
• SPATIAL DISTRIBUTION
• STRUCTURAL PROPERTIES
• PRECURSORS
• TUNNELING(ELECTRONICS)
• ELECTRONIC SCANNERS
• ELECTRONIC EQUIPMENT
• MICROSCOPY
• ELECTRON MICROSCOPY
• SURFACES
• SEGREGATION(METALLURGY)
• GEOMETRY
• DIFFUSION
• PYROLYSIS
• DIBORANES
• DECABORANES

Subject Categories:

• Inorganic Chemistry
• Organic Chemistry
• Physical Chemistry
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE