Accession Number:

ADA289187

Title:

Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001).

Descriptive Note:

Interim technical rept.,

Corporate Author:

WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY

Personal Author(s):

• Wang, Yajun
• Hamers, Robert J.
• Kaxiras, Efthimios

Report Date:

1994-12-20

Pagination or Media Count:

17.0

Abstract:

Scanning tunneling microscopy and tunneling spectroscopy have been used to investigate the local structural and electronic properties of boron-induced reconstructions on Si001. Thermal decomposition of diborane produces three ordered reconstructions, which arise from ordered arrangements of three structural subunits, with a local boron coverage of 12 monolayer. A structural model is proposed which accounts for the observed STM features. The principal structural subunit is shown to be an ordered arrangement of four boron atoms at substitutional sites in the first bulk-like silicon layer, which is then capped with ordered arrangements of silicon dimers and dimer vacancies.

Descriptors:

• *BORON
• *ATOMIC STRUCTURE
• MODELS
• SPECTROSCOPY
• STRUCTURAL PROPERTIES
• ELECTROMAGNETIC PROPERTIES
• TUNNELING(ELECTRONICS)
• ELECTRONIC SCANNERS
• ATOMS
• ELECTRON MICROSCOPY
• SILICON
• PYROLYSIS
• DIMERS
• DIBORANES

Subject Categories:

• Inorganic Chemistry
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE