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Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001).
Interim technical rept.,
WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY
Pagination or Media Count:
Scanning tunneling microscopy and tunneling spectroscopy have been used to investigate the local structural and electronic properties of boron-induced reconstructions on Si001. Thermal decomposition of diborane produces three ordered reconstructions, which arise from ordered arrangements of three structural subunits, with a local boron coverage of 12 monolayer. A structural model is proposed which accounts for the observed STM features. The principal structural subunit is shown to be an ordered arrangement of four boron atoms at substitutional sites in the first bulk-like silicon layer, which is then capped with ordered arrangements of silicon dimers and dimer vacancies.
APPROVED FOR PUBLIC RELEASE