Accession Number:

ADA289053

Title:

High-Density Plasma Source for Large-Area Chemical Vapor Deposition of Diamond Films.

Descriptive Note:

Monthly rept. 1 Nov-30 Nov 94,

Corporate Author:

SCIENCE RESEARCH LAB INC SOMERVILLE MA

Personal Author(s):

• Chen, Xing

Report Date:

1994-12-15

Pagination or Media Count:

4.0

Abstract:

During this program Science Research Laboratory SRL and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasmaatomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density 1014-1017 cm-3 plasma over an area of 0.1-1 m2. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase 1, leading to an engineering design of a large-area plasma reactor for Phase H implementation. The period of performance is from 30 September 1994 to 31 March 1995.

Descriptors:

• *PLASMAS(PHYSICS)
• *CHEMICAL VAPOR DEPOSITION
• PROCESSING
• THIN FILMS
• FABRICATION
• DIAMONDS
• FEASIBILITY STUDIES
• HIGH DENSITY
• LANGMUIR PROBES
• CHEMICAL ENGINEERING
• PARTICLE BEAMS

Subject Categories:

• Industrial Chemistry and Chemical Processing
• Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE