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Low Temperature Materials Growth and Processing Development for Flat Panel Display Technology Applications.

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Quarterly technical rept. 15 Aug-14 Nov 94,

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The goal of this phase of the project is to make DC, AC, transient measurements on the TFTs, fabricated by Professor Sigmon and his group at Arizona State University using low temperature processing techniques. From these measurements, SPICE parameters will be extracted and these results will be used for process monitoring and device and process optimization for display applications. This work was started by Rao Gudimetla on 10194 and this technical report covers the period 10194 to 12194. The devices from ASU are expected to be ready in early 1995. meanwhile, previously obtained measurements on TFTs fabricated at Tektronix Inc. are being used to establish a reliable extraction methodology. Both n- and p-channel TFTs, obtained from Tektronix Inc., were fabricated in silicon- implanted polysilicon, Followed by a long time anneal without any grain boundary hydrogenation. The gate lengths are 12.5 and 5 microns with 100 micron width. S- parameter measurements which were converted to Y-parameters were made at several bias points over the frequency range of 300 Khz to 20 Mhz. The following are the key accomplishments. 1. An often suggested AC equivalent circuit for TFTs was used to extract the parameters such as transconductance, gate to source capacitance, gate to drain capacitance, and drain to source capacitance as ftincflons of frequency at different bias points. 2. A detailed analysis for the AC performance of TFTs, developed in the past by the author in the linear and triode regions of I-V data, is being compared with the extracted parameters of the devices and equivalent circuit.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials

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