Accession Number:

ADA288738

Title:

SOSDOR: Solid State Device Simulator,

Descriptive Note:

Corporate Author:

DEFENCE RESEARCH ESTABLISHMENT OTTAWA (ONTARIO)

Personal Author(s):

• Varga, L.

Report Date:

1994-10-01

Pagination or Media Count:

25.0

Abstract:

A 3-D solid state device simulator code, developed at DREO, is presented. The code uses a seven.point finite difference scheme to discretize Poissons and the continuity equations. The equations are then solved using the Newton-Raphson iteration method. Additional information pertaining to griding, carrier mobility and recombination models as well as boundary condition types incorporated into the code is also presented. The source files of the code and the graphical IO interfaces are also described. The code was tested by simulating a PIN diode under no bias and under a 2OV reverse bias condition. The simulation results are in excellent agreement with the results of simulation of the same device by the industry-standard PADRE code.

Descriptors:

• *COMPUTERIZED SIMULATION
• *SOLID STATE PHYSICS
• INTERFACES
• CANADA
• FINITE DIFFERENCE THEORY
• BOUNDARY VALUE PROBLEMS
• GRAPHICS
• RECOMBINATION REACTIONS
• CONTINUITY
• ITERATIONS
• CARRIER MOBILITY
• POISSON EQUATION

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE