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SOSDOR: Solid State Device Simulator,
DEFENCE RESEARCH ESTABLISHMENT OTTAWA (ONTARIO)
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A 3-D solid state device simulator code, developed at DREO, is presented. The code uses a seven.point finite difference scheme to discretize Poissons and the continuity equations. The equations are then solved using the Newton-Raphson iteration method. Additional information pertaining to griding, carrier mobility and recombination models as well as boundary condition types incorporated into the code is also presented. The source files of the code and the graphical IO interfaces are also described. The code was tested by simulating a PIN diode under no bias and under a 2OV reverse bias condition. The simulation results are in excellent agreement with the results of simulation of the same device by the industry-standard PADRE code.
APPROVED FOR PUBLIC RELEASE