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Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.
Monthly rept. no. 5.
ELECTRO-OPTEK CORP TORRANCE CA
Pagination or Media Count:
During this program period, we have designed a readout circuit based on cryo CMOS technology with device features of 1.0 micron dimensions. The input circuit as depicted in Fig. 1 uses a direct injection approach and the cell is 2 mil x 2 mil dimension. The concept of direct injection readout is also applied for the InSbInAsSb pin detector, since the reverse bias impedance of pin is reasonably high.
APPROVED FOR PUBLIC RELEASE