Accession Number:

ADA288607

Title:

Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Descriptive Note:

Monthly rept. no. 5.

Corporate Author:

ELECTRO-OPTEK CORP TORRANCE CA

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

2.0

Abstract:

During this program period, we have designed a readout circuit based on cryo CMOS technology with device features of 1.0 micron dimensions. The input circuit as depicted in Fig. 1 uses a direct injection approach and the cell is 2 mil x 2 mil dimension. The concept of direct injection readout is also applied for the InSbInAsSb pin detector, since the reverse bias impedance of pin is reasonably high.

Descriptors:

• *ARRAYS
• *EPITAXIAL GROWTH
• *MOLECULAR BEAMS
• *LONG WAVELENGTHS
• *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
• INPUT
• INJECTION
• DETECTORS
• SUPERLATTICES
• FABRICATION
• CIRCUITS
• IMPEDANCE
• BIAS
• INDIUM
• ANTIMONY
• READ OUT TECHNIQUES
• ARSENIC
• PINS
• CRYOGENICS

Subject Categories:

• Inorganic Chemistry
• Crystallography
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE