Accession Number:

ADA288604

Title:

Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Descriptive Note:

Monthly progress rept. no. 4.

Corporate Author:

ELECTRO-OPTEK CORP TORRANCE CA

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

2.0

Abstract:

During this program period, we have performed large area growth of device-quality InAsSb films on 2-inch Si substrates. We have fabricated InAsSb films of uniform thickness, which are suitable for dense detector arrays. To obtain higher quantum efficiency, a pin structure for LWIR detector has been proposed and delineated. Results obtained in the last month are presented and discussed in the following sections.

Descriptors:

• *EPITAXIAL GROWTH
• *MOLECULAR BEAMS
• *LONG WAVELENGTHS
• * ARRAYS
• THICKNESS
• DETECTORS
• GROWTH(GENERAL)
• FILMS
• FABRICATION
• SUBSTRATES
• SILICON
• HIGH DENSITY
• QUANTUM EFFICIENCY
• INDIUM
• ANTIMONY
• ARSENIC
• INFRARED EQUIPMENT

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE