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Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.
Monthly progress rept. no. 4.
ELECTRO-OPTEK CORP TORRANCE CA
Pagination or Media Count:
During this program period, we have performed large area growth of device-quality InAsSb films on 2-inch Si substrates. We have fabricated InAsSb films of uniform thickness, which are suitable for dense detector arrays. To obtain higher quantum efficiency, a pin structure for LWIR detector has been proposed and delineated. Results obtained in the last month are presented and discussed in the following sections.
APPROVED FOR PUBLIC RELEASE