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Accession Number:
ADA288567
Title:
Diamond Atomic Layer Epitaxy.
Descriptive Note:
Quarterly rept. 1 Jul-1 Oct 94,
Corporate Author:
S I DIAMOND TECHNOLOGY INC HOUSTON TX
Report Date:
1994-10-06
Pagination or Media Count:
8.0
Abstract:
Work during the current reporting period has focused on the following items 1 Auger and ELS of deposition with methyl bromide on diamond. 2 Studies of methyl bromide and ethylene reaction with silicon 100 and 111. 3 Further studies of hydrogen on diamond100 and surface reconstructions. 4 Set-up and testing of load-lock chamber for hot filament CVD. Auger and ELS analysis was performed on a diamond100 sample on which carbon was deposited with cracked methyl bromide. This analysis was carried out ex situ with a JEOL Auger microprobe which was recently acquired by SI Diamond Technology. Mask lines from the tantalum straps which were used to mount the crystal on the sample holder are apparent in electron microscope images of the sample. The carbon KLL Auger signal from the sample at about 272 eV is observed to have the lineshape which is characteristic of carbon in diamond as opposed to graphitic form. In addition, the pipi plasmon which has been observed at approximately 6.5 eV energy loss for graphitic carbon is not observed in electron energy loss spectroscopy ELS of this sample which was performed at 350 eV beam energy. Both of these results point to deposition of carbon in diamond form .
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
