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Accession Number:
ADA288381
Title:
Chemistry Involving the Separation, Isolation, and Immobilization of Ill-V Compound Semiconductor Nanocrystals and Quantum Dots.
Descriptive Note:
Annual technical rept. 1 Oct 93-20 Sep 94,
Corporate Author:
DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
Report Date:
1994-09-14
Pagination or Media Count:
11.0
Abstract:
The facile thermolysis of Cl2GaPSiMe322 to eliminate Me3 SiX and yield nanocrystalline GaP has been studied via thermal gravimetric analysis TGA and it has been found that the Me3SiCl is eliminated in a step-wise manner. Also, the new ternary single-source precursor Ga2As,PC13n has been synthesized and thermolyzed to yield the ternary III-V GaAsxPy. In addition, nanocrystalline GaAs and GaP, prepared by the KherWells low temperature solution phase method, have been studied by transmission electron microscopy TEM and, in the TEMs of both, the lattice fringes of nanocrystalline material are clearly evident. Using a host of analytical techniques, it has been shown that the GaAs has crystalline regions of 12 or - 2 nm. In addition, efforts in immobilization of particles have involved all binary permutations of In and Ga phosphides and arsenides. The materials have been cast onto electrode surfaces from volatile solvents to give uniform deposits. Dispersions can also be created in the presence of monomers which are subseqently electropolymerized to prepare composite films. In an STM plot of InAs immobilized in a polypyrrole film, the nanocrystals appear as yellow dots embedded in the brown film, indicating that they extend above the film, andor have a higher conductivity than the polymer.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
