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Mega-Scale Simulation of Multi-Layer Devices-- Formulation, Kinetics, and Visualization.
Final rept. 1 Jun 91-31 May 94,
STANFORD UNIV CA
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A new energy transport model including both carrier and lattice temperatures has been developed and implemented in PISCES 2Er. Major capabilities in physical models for compound semiconductor devices include heterojunction interfaces, deep level trapping and new mobility models. Applications of PISCES 2Er in the modeling of GaAs MESFET sidegating and electronic effects in light-emitting structures have been achieved. The GaAs MESFET modeling of dc and ac effects have been confirmed experimentally at Stanford and in collaboration with industry. The LED and vertical cavity laser modeling is being applied by Hewlett-Packard in both their research laboratories and product divisions. Algorithms developed for improved accuracy and efficiency in device modeling include ac analysis for microwave devices, multi-processor direct solvers and massively parallel iterative solvers. Supported under the high-performance computing HPC initiative, a prototype version of PISCES-MP running on Intel, Thinking Machines and IBM parallel machines has demonstrated order-of-magnitude speed enhancements compared to the single processor version. The parallel iterative solver in the STRIDE 3D code has solved device problems with 15 million equations in 20 minutes on a 520 processor Intel machine. A mixed-mode analysis capability that couples PISCES and SPICE has been demonstrated and applied to SRAM and OEIC applications.
APPROVED FOR PUBLIC RELEASE