Accession Number:

ADA285991

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Quarterly technical rept. 1 Jul-30 Sep 1994

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Report Date:

1994-09-01

Pagination or Media Count:

28.0

Abstract:

Candidate substrate materials for the pseudomorphic growth Cu films as host templates on which to subsequently deposit diamond films have been selected. The selection criteria were 1 high diamond nucleation density as a bulk substrate 2 low strain energy density in the interlayer material upon 100 two dimensional matching with the substrate 3 ease of deposition of the interlayer material and 4 low solubility at growth temperatures. The most promising interlayer materials were Ni, Si, Hf and Ti. Experimentally, the deposition of 5A of Ti on Cu increased the diamond particle density relative to bare Cu by an order of magnitude. No appreciable diffusion to Ti into Cu occurred and only a thin carbide layer was necessary for diamond nucleation. Raman spectroscopy has been employed to analyze residual compressive stress in four diamond films. The line shape analysis indicated that the Raman band is mostly Lorentzian for all four samples and that the main broadening mechanism is via life-time shortening due to scattering from Si and N impurity concentrations. The line width increased linearly as a function of peak position, indicative of a correlation between the impurities and stress. Pseudomorphic interlayers, Copper substrates, Diamond, Heteroepitaxy, Nucleation, Growth, Raman spectroscopy, Impurities, Stress.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE