Accession Number:

ADA285858

Title:

Semiconductor Laser Joint Study Program with Rome Laboratory

Descriptive Note:

Final rept. Feb 1993-Feb 1994

Corporate Author:

CORNELL UNIV ITHACA NY

Report Date:

1994-09-01

Pagination or Media Count:

37.0

Abstract:

A program to jointly study vertical-cavity surface emitting lasers VCSEL for high speed vertical optical interconnects VOI has been conducted under an ESE between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSELs emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results. Vertical cavity surface emitting lasers VCSEL, Optical interconnects, Molecular beam epitaxy

Subject Categories:

  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE