Accession Number:

ADA285794

Title:

Current Estimation for Electromigration, Hot Carriers, and Voltage Drop

Descriptive Note:

Final rept. Aug 1992-1993

Corporate Author:

ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

Report Date:

1994-09-01

Pagination or Media Count:

166.0

Abstract:

This report summarizes work in reliability analysis in VLSI CMOS circuits, particularly electromigration in metal lines, power busses and signal lines, hot carrier effects in devices, and voltage drop in power busses. In addition to process parameters, all of these effects can be shown to depend on current flow in the circuit. More specifically, electromigration and hot carrier induced degradation are both long-term effects and are related to the average current flow over time under all possible input signals that the design experiences. Maximum voltage drop, on the other hand, depends on finding the maximum current flow in the power busses, caused by a specific few inputs. Thus, our emphasis in this work is on developing fast and reliable methods for estimating average and maximum currents. In addition, we have also improved on our bus extractor to extract accurate RC models of power busses from layout information for electromigration and voltage drop estimation. This work is part of our goal of developing CAD tools for estimating physical reliability effects in VLSI designs, and to automatically modify the design, or at least suggest design changes, in order to improve the short and long term reliability of the design under realistic operating conditions. Electromigration, Power busses, VLSI CMOS Circuits

Subject Categories:

  • Electrical and Electronic Equipment
  • Computer Programming and Software
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE