Accession Number:

ADA285581

Title:

Investigation of Single Events Upsets in Silicon and GaAs Structures Using Reaction Calculations

Descriptive Note:

Technical rept. 1 Oct 1988-10 Mar 1992

Corporate Author:

CLEMSON UNIV SC KINARD LAB OF PHYSICS

Personal Author(s):

Report Date:

1994-09-01

Pagination or Media Count:

336.0

Abstract:

Two procedures were developed to obtain the dimensions of the sensitive volume one using charge collection measurements and the other proton Seu cross sections measured at different energies and angles of incidence. The CUPID simulation codes play an important role. They have been made user friendly and received adequate documentation. The methodology has been extended to single event latch-up and displacement damage. Energy deposition, CUPID, Charge collection, Sensitive volume, Single event upsets, Spallation reactions, Displacement damage, Single event latch-up and displacement damage.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electromagnetic Shielding
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE