Accession Number:

ADA285386

Title:

Heteroepitaxial Diamond Growth

Descriptive Note:

Quarterly rept. no. 1, 1 Jan-31 Mar 1994

Corporate Author:

RESEARCH TRIANGLE INST (RTI) INST RESEARCH TRIANGLE PARK NC

Report Date:

1994-09-01

Pagination or Media Count:

21.0

Abstract:

Work progressed in two areas during this quarter of the program novel substrate preparation techniques for homoepitaxial growth, and characterization of diamond substrates and homoepitaxial material. Natural diamonds are the most viable option available for generating a large area diamond substrates via a tiled array. In order to routinely grow high-quality homoepitaxial films on these substrates a repeatable substrate preparation procedure is required. A method based on ion-implantation followed by electrochemical lift-off is described in section 2 of the report. Also required for routine growth of single crystal diamond films are techniques for assessing the quality of the films produced. Several techniques are described in the report which address this requirement.

Subject Categories:

  • Physical Chemistry
  • Laminates and Composite Materials
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE