Accession Number:

ADA285317

Title:

Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.

Descriptive Note:

Final rept.,

Corporate Author:

ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE SCIENCE

Personal Author(s):

Report Date:

1994-07-14

Pagination or Media Count:

12.0

Abstract:

The final report covers 1 The development of synthetic methods and detailed phase and compositional characterization of our cubic SiC-GeC solid solutions and diamond structured SiGeC thin films 2 Our preliminary findings on bandgap measurements 3 The development of a novel technique for in situ observation of SiGeC CVD in an environmental electron microscope. We used this technique to deposit films that are lattice matched to Silicon. The work was carried out in the Chemical Vapor Deposition Laboratory by graduate student Michael Todd, postdoctoral research associate Philippe Bonneau, and Professor John Kouvetakis and the Ion Beam Facility Barry Wilkens, with assistance from the staff of the High Resolution Electron Microscopy Group Dr. Renu Sharma, and Professor David Smith at Arizona State University. Vibrational characterization and bandgap studies were carried out by Nigel Cave at Motorola Phoenix.

Subject Categories:

  • Metallurgy and Metallography
  • Crystallography
  • Electrical and Electronic Equipment
  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE