Accession Number:

ADA285159

Title:

HTS SNS Devices on Large-Area Substrates by Single-Source MOCVD

Descriptive Note:

Final rept. 4 Jun 1993-28 Feb 1994

Corporate Author:

CONDUCTUS INC SUNNYVALE CA

Personal Author(s):

Report Date:

1994-05-18

Pagination or Media Count:

17.0

Abstract:

A novel, single-source metalorganic chemical vapor deposition SSMOCVD technique has shown exceptional promise for the growth of epitaxial oxide films and multilayers on large area substrates, as needed for the commercial-scale production of high temperature superconductor devices and circuits. In this contract the SSMOCVD technique was applied to growth of YBa2Cu307-x and CaRuO3 films and multilayers for the fabrication of superconductor-normal-superconductor Josephson junctions. A process was developed for the growth of epitaxial CaRuO3 films by SSMOCVD, which was the first reported growth of CaRuO3 by MOCVD. Also, a process was developed for the in situ growth of epitaxial YBa2Cu307-xCaRuO3 multilayers by SSMOCVD. Finally, epitaxial SNS edge junctions were fabricated and tested which used a top YBCO caRuo3 bilayer grown in situ by SSMOCVD and a base SrTiO3YBa2Cu3O7-x bilayer grown in situ by pulsed laser ablation.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE