Accession Number:

ADA285120

Title:

Low Temperature Synthesis of Semiconductor Materials

Descriptive Note:

Annual Rept. 15 Aug 1993-14 Aug 1994

Corporate Author:

NORTH DAKOTA STATE UNIV FARGO

Personal Author(s):

Report Date:

1994-09-14

Pagination or Media Count:

14.0

Abstract:

This report summarizes the results obtained in the second year of the grant. During this time experiments were conducted which demonstrated that phenyl groups on heavier main group atoms undergo migration with great facility. This mobility has been utilized to prepare novel materials with a broad range of semiconducting and optoelectronic properties. Gallium arsenide and gallium phosphide have been prepared at modest temperatures approx. 400 deg C from easily prepared single source precursors. Work conducted in this time period led to the discovery that ternary compounds composed of tin, sulfur and selenium can be prepared in high yields at approx. 400 deg C as phase pure materials in nonstoichiometric ratios from readily available compounds. Conventional procedures call for temperatures 1000 deg C. Also discovered was that pyrolysis of perbenzylated compounds is advantages over the alkylated analogues among which are lower toxicity, faster decomposition times and lower contamination of target products.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Laminates and Composite Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE