Accession Number:

ADA284898

Title:

Low Temperature Grown and Highly Non-Stoichiometric GaAs and Related Materials

Descriptive Note:

Final rept. 1 Apr 1993-30 Mar 1994

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s):

Report Date:

1994-08-03

Pagination or Media Count:

152.0

Abstract:

Forty-one papers were presented in five sessions, as follows Growth Issues, including growth of As and P-based compounds, annealing effects, and characterization by scanning tunneling microscopy STM real-time ellipsometry, and positron annihilation Processing and Characterization, including point- defect and precipitate formations and their characterization by electrical, optical magnetic resonance, and STM techniques Optical and Optoelectronic Properties, including the materials GaAs, InGaAs, and InGaP, and their responses to light stimulation, explained by various models InP and Related Ternary Materials, including the Materials InP, InGaAs, InAlAs, and ordered InGaAs InAlAs layers, characterized by optically detected magnetic resonance, electrical measurements, tunneling electron microscopy, and photoreflectance Applications of Nonstoichiometric Materials, including power MESFET design, phase noise measurements, coherent microwave generation, excitonic electro-optic observations, and GaAs on Si device applications.

Subject Categories:

  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE