Accession Number:

ADA282763

Title:

X-Ray Studies of Semiconductor Superlattices and Heterostructures

Descriptive Note:

Final technical rept., 1985-1991

Corporate Author:

STATE UNIV OF NEW YORK AT BUFFALO DEPT OF PHYSICS AND ASTRONOMY

Personal Author(s):

Report Date:

1991-01-01

Pagination or Media Count:

14.0

Abstract:

A variety of microstructure-probing techniques using high intensity x-rays from synchrotron radiation were employed for a comprehensive study of the short-range-order structures and interfaces in layered semiconductors grown by epitaxy. These layered materials are important for novel electronic and opto-electronic device applications. The experimental approaches were based on our extensive experience in using the measurements of x-ray fluorescence, absorption, reflectivity, and electron yield to probe the local structures about selected atomic species and interfaces in compound and multilayer semiconductors. Emphasis was placed on determining the local environment surrounding the impurity atoms, as well as the local structures around the interface, for various compound semiconductors and multilayers prepared by our collaborators at IBM. The results obtained may be viewed as a good example of successful university-industry collaboration sponsored by ONR. Efforts were also devoted to converting observations made in the laboratory to become service tools in the field for further investigations of multilayer semiconductor electronic materials.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Particle Accelerators
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE