Accession Number:

ADA282720

Title:

Investigation of a Normal Incidence High-Performance P-Type Strained Layer In(0.3)Ga(0.7)As/In(0.52)Al(0.48)As Quantum Well Infrared Photodetector

Descriptive Note:

Semi-annual rept. no. 2, 16 Jan-15 Jul 1994

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1994-07-15

Pagination or Media Count:

34.0

Abstract:

During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAsInGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 microns and 8. 4 microns in the LWIR band and 5.5 microns in the MWIR band. This detector is under background limited performance BLIP at temperatures up to 70 K. The measured responsivity were found to be 24 mAW and 45 mAW for the two LWIR peaks respectively, while a responsivity of 13 mAW was found for the MWIR peak all at T75 K. Additional characterization on the tensile strain InGaAsInAlAs on InP P-QWIP has been performed and the results are summarized in this report. Currently, we are investigating other possible p-type QWIP structures with different performance parameters. These include a new dual strained InGaAs InAlAs p-type QWIP. Additional consideration is being given towards the reliability of p-type contacts and the strained layer material for these QWIP structures P-type strained layer InGaAsInAlAs Quantum Well Infrared Photodetectors QWIPs, Intersubband absorption, Dark current, Responsivity, Detectivity

Subject Categories:

  • Electrical and Electronic Equipment
  • Optical Detection and Detectors
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE