Scanning Tunneling Microscopy of III-V Semiconductors
Final rept. 1 Mar 1991-28 Feb 1994
ARIZONA UNIV TUCSON DEPT OF PHYSICS
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Scanning tunneling microscopy and theory were combined to create novel depressive quantum dots at room temperature on the 110 surfaces of InSb --- dots which merit further exploration as potential nanopixels for tiny-device lithography develop a strained-layer superlattice model of high-temperature superconductivity image, understand, and make models of single-atom-high steps on III-V surfaces invent and exploit a new kind of spectroscopy of surface states of semiconductors, called tipology develop phenomenological models of variety of surface phenomena.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Quantum Theory and Relativity