Accession Number:

ADA281722

Title:

Scanning Tunneling Microscopy of III-V Semiconductors

Descriptive Note:

Final rept. 1 Mar 1991-28 Feb 1994

Corporate Author:

ARIZONA UNIV TUCSON DEPT OF PHYSICS

Personal Author(s):

Report Date:

1994-06-06

Pagination or Media Count:

7.0

Abstract:

Scanning tunneling microscopy and theory were combined to create novel depressive quantum dots at room temperature on the 110 surfaces of InSb --- dots which merit further exploration as potential nanopixels for tiny-device lithography develop a strained-layer superlattice model of high-temperature superconductivity image, understand, and make models of single-atom-high steps on III-V surfaces invent and exploit a new kind of spectroscopy of surface states of semiconductors, called tipology develop phenomenological models of variety of surface phenomena.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE