Accession Number:

ADA281631

Title:

LPEE Growth and Characterization of InxGa(1-x)ASySb(1-y) Lattice Matched to GaSb and InAs for Photodetectors

Descriptive Note:

Final rept. 15 Sep 1989-31 Oct 1993

Corporate Author:

NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1994-06-01

Pagination or Media Count:

110.0

Abstract:

The optical characteristics of LPEE grown undoped and doped GaSb and GaInAsSb epilayers of different compositions were the subject of detailed investigations. The temperature and intensity dependences of the low temperature photoluminescence PL spectra of these alloys were studied as a function of the alloy compositions to determine the nature of the recombination processes. In Te-doped GaSb epilayers, the PL spectra become increasingly complicated due to the presence of additional transitions associated with deeper acceptor levels. A systematic and quantitative evaluation of the effects of compensation in GaSb has been examined as a function of Te concentration in the layers and growth temperature, under both low and high excitation conditions. Photoreflectance spectroscopy has been assembled for the characterization of semiconductor band structure and surface. Electrical transport characteristics of Au-n-GaSb Schottky diodes were investigated on the LPEE grown epilayers as a function of the growth temperature of the grown layers. Well behaved p-n homojunctions with forward onset voltage of 0.5V were fabricated on LPEE grown GaSb layers by Zn diffusion in an open tube configuration. The room temperature electrical characteristics of these junctions were studied in detail.

Subject Categories:

  • Physical Chemistry
  • Optical Detection and Detectors
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE