Accession Number:

ADA281592

Title:

Synthesis of Tungsten Nitrene Complexes as Precursors for Tungsten Nitride

Descriptive Note:

Final rept., 1 May 1991-30 Apr 1994

Corporate Author:

STANFORD UNIV CA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1994-06-16

Pagination or Media Count:

4.0

Abstract:

Chemical vapor deposition using organometallic precursors MOCVD provides a method for the preparation of thin films. Low valent tungsten nitrene complexes were synthesized as potential precursors to tungsten nitride WNx, a material used in diffusion barriers for Si or GaAs semiconductor devices. The original target precursors for MOCVD of WNx were the carbonyl-containing complexes CO5-nPR3nW-NR, where R is an alkyl or aryl group. Later synthetic work involved the tungsten IV imido or nitrene complexes CO 2I2LWtriple bondsNPh, which were prepared by oxidation of the zwitterionic species CO5WNPhNPhCOMePh with one equivalent of I2 followed by addition of a the coordinating species L LTHF, pyridine, PMe3, POMe3.

Subject Categories:

  • Inorganic Chemistry
  • Organic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE