Picosecond Silicon Metal-Semiconductor-Metal Photodiode
Rept. for 11-16 Jul 1993
ROCHESTER UNIV NY
Pagination or Media Count:
The ultrafast characteristics of crystalline-silicon metal- semiconductor-metal MSM photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with full- width at half-maximum FWHM as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Radiofrequency Wave Propagation