Accession Number:

ADA281548

Title:

Picosecond Silicon Metal-Semiconductor-Metal Photodiode

Descriptive Note:

Rept. for 11-16 Jul 1993

Corporate Author:

ROCHESTER UNIV NY

Report Date:

1993-07-16

Pagination or Media Count:

5.0

Abstract:

The ultrafast characteristics of crystalline-silicon metal- semiconductor-metal MSM photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with full- width at half-maximum FWHM as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Optics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE