Accession Number:

ADA281469

Title:

Interface Properties of Wide Bandgap Semiconductor Structures

Descriptive Note:

Semi-annual technical rept. 1 Jan-30 Jun 1994

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Report Date:

1994-06-01

Pagination or Media Count:

163.0

Abstract:

The structure and electronic properties of 1x1 and 2x1 H-terminated and clean C1002x1 surfaces have been calculated with ab initio molecular dynamics. A negative electron affinity was found for these surfaces a positive electron affinity was found for the C100 surface. In related growth calculations for ALE of diamond, the desorption of the HF molecule was found to be critical for H- and F-based growth mechanisms. Ni3Si and Ni substrates were compared for the deposition of diamond films under the same conditions. Diamond C particles were obtained on the Ni3Si, but only diamond-like C and graphite on the latter. C films deposited on via CVD. Field emission showed very high stability as well as high current densities. Step bunching occurred at the outset of the initial stage of SiC growth using C2H4Si2H6 ratios of 1, 2 or 10 and gas source GS MBE. Subsequent growth occurred vis island formation C2H4- rich or step-flow 11 ratio. Beta-SiC or 6H-SiC deposited using high or 11 CSi ratios, respectively.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE