Accession Number:

ADA281406

Title:

Investigation of Novel Electrical Transport Phenomena in Semimetal-Semiconductor Heterostructures

Descriptive Note:

Final rept. 1 Sep 1992-2 Mar 1994

Corporate Author:

HOUSTON UNIV TX DEPT OF PHYSICS

Personal Author(s):

Report Date:

1994-05-02

Pagination or Media Count:

7.0

Abstract:

The SbGaSb system has been proposed as a unique new material which has significant potential for quantum transport studies, electronic devices, incorporating semimetalsemiconductor heterostructures, and for infrared optical and nonlinear optical applications requiring an indirect narrow band-gap material. Researchers have demonstrated the growth of both single SbGaSb heteroepitaxial layers and elementary GaSbSbGaSb multilayer structures using MBE and MEE on GaSb 111 substrates. Magnetotransport measurements have yielded electron and hole mobilities in excess of 3 x 10exp 4 sq cmVdots, which correspond to mean free paths of 2 micrometers for both carrier types. Further studies are current underway to characterize the transport and optical properties of SbGaSb multilayer structures. Electrical Transport Phenomena, Heterostructures, Semimetals, Semimetal-Semiconductor Heterostructures, Devices, Antimonide semiconductors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Electricity and Magnetism
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE