Epitaxial MOCVD of Thin Film Ceramics for Pyroelectric Detectors
Final rept. 1 Jun-1 Dec 1993
SPIRE CORP BEDFORD MA
Pagination or Media Count:
The objective of this research is to increase the sensitivity of pyroelectric detectors by growing a thin-film single crystal of lead-titanate PTO on cobalt-silicide CoSi2 on silicon using metalorganic chemical vapor deposition MOCVD. A thermal isolated, aligned film should increase detectivity. In Phase I of this research Spire demonstrated MOCVD of PTO on CoSi2 on silicon by MOCVD using a diffusion barrier between the films. Small capacitors were fabricated and the dielectric constant was formed to vary with temperature as expected. Multiple films were required to preserve the heteroepitaxial crystal structure while preventing chemical interactions and interdiffusion. Formation of silicon-dioxide prevents direct deposition of epitaxial oxide films on silicon, so that CoSi2 was deposited first. This was followed by laser ablation deposition of the conducting film yttrium-barium- copper-oxide to prevent inter-diffusion of lead. The PTO film was then put down by MOCVD, and the structure was verified by X-ray diffraction.
- Industrial Chemistry and Chemical Processing
- Infrared Detection and Detectors