Accession Number:

ADA281397

Title:

Epitaxial MOCVD of Thin Film Ceramics for Pyroelectric Detectors

Descriptive Note:

Final rept. 1 Jun-1 Dec 1993

Corporate Author:

SPIRE CORP BEDFORD MA

Personal Author(s):

Report Date:

1993-12-01

Pagination or Media Count:

21.0

Abstract:

The objective of this research is to increase the sensitivity of pyroelectric detectors by growing a thin-film single crystal of lead-titanate PTO on cobalt-silicide CoSi2 on silicon using metalorganic chemical vapor deposition MOCVD. A thermal isolated, aligned film should increase detectivity. In Phase I of this research Spire demonstrated MOCVD of PTO on CoSi2 on silicon by MOCVD using a diffusion barrier between the films. Small capacitors were fabricated and the dielectric constant was formed to vary with temperature as expected. Multiple films were required to preserve the heteroepitaxial crystal structure while preventing chemical interactions and interdiffusion. Formation of silicon-dioxide prevents direct deposition of epitaxial oxide films on silicon, so that CoSi2 was deposited first. This was followed by laser ablation deposition of the conducting film yttrium-barium- copper-oxide to prevent inter-diffusion of lead. The PTO film was then put down by MOCVD, and the structure was verified by X-ray diffraction.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Infrared Detection and Detectors
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE