Quantum Transport in Semiconductor Devices
ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH
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This program concentrated on research investigating quantum effects in which these important in ultra-small semiconductor devices, and the manner in which these effects may limit downscaling of individual feature sizes. The major concentrations of the program were on Tunneling-in gated semiconductor structures, an effect which has been found to be important in normal high- electron mobility transistors HEMTs with gate lengths of 0.025 micrometer. The role played by slab and interface phonon modes in transport within small semiconductor devices. Modeling of quantum effects in MESFET devices as a general tool for approaching the inclusion of such effects in dynamic semiconductor device models. Semiconductor devices, Hydrodynamic equations, Velocity overshoot, MESFETS, Device modeling.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Quantum Theory and Relativity