Accession Number:

ADA281218

Title:

Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development

Descriptive Note:

Semiannual technical rept. 1 Jan-30 Jun 1994

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1994-06-01

Pagination or Media Count:

36.0

Abstract:

AlN films with essentially atomically flat surfaces, indicative of two-dimensional growth have been deposited on on-axis 6H-SiC0001 surfaces at 1050 deg C via plasma-assisted gas source MBE. Island features, the coalescence of which caused defects and influenced film quality, were observed on the vicinal surface. SiCAlN pseudomorphic multilayers with abrupt interfaces and AlNxSiC1-x solid solutions have been deposited using a similar technique and substrate. The use of on-axis substrates resulted in superior structures. High AIN solid solutions have been achieved however, they were polycrystalline. Chemical interdiffusion between 6-H SiC wafers and deposited single crystal AIN thick films between 1800 and 1950 deg C was not observed via parallel electron energy loss microscopy and Auger depth profiles to within 15A of the interface. Pseudomorphic GaNAlGaN double heterostructures with abrupt interfaces have also been produced using GSMBE. The purpose is for UV light emitting diodes. A supersonic jet deposition system has been designed and commissioned for the growth of III-V nitride films. Silicon carbide, Aluminum nitride, Gallium nitride, Two dimensional growth, Pseudomorphic heterostructures, Molecular beam epitaxy, Chemical interdiffusion, Light emitting diodes, Supersonic jet

Subject Categories:

  • Electrical and Electronic Equipment
  • Plasma Physics and Magnetohydrodynamics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE