Accession Number:

ADA281156

Title:

Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation

Descriptive Note:

Final rept. 1 Oct 1993-1 Apr 1994

Corporate Author:

SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Report Date:

1994-06-17

Pagination or Media Count:

36.0

Abstract:

Through the use of numerical methods involving both the drift and diffusion equations including traps, and more recently the quantum Liouville equation, Scientific Research Associates, Inc., SRA has been examining the physics and operation of LTG materials and devices. Both defect and Schottky models have been studied, and two-dimensional microscopic and macroscopic device simulations have been performed. A new generalization of the drift and diffusion equations, including current, has been implemented for the specific purpose of treating embedded metallic precipitates. This document summarizes SRA work under U.S. Air Force, Office of Scientific Research, Contract F49620-91-C-0023. Gallium arsenide, Low temperature, Precipitates, Defects, Traps, Buried schottky barriers.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Numerical Mathematics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE