Accession Number:

ADA281146

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Quarterly technical rept. 1 Apr-30 Jun 1994

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1994-06-01

Pagination or Media Count:

34.0

Abstract:

Diamond hot wire anemometers were fabricated and tested in a hybrid constant current, constant temperature mode. Wires were tested for response time, sensitivity and reproducibility, with the objective being to observe the effects of geometrical variations on these properties. Results indicated no strong correlation between geometry and response time. Sensitivity measurements also showed little difference among geometries. Research continued in the growth of boron nitride films on various substrates including Si100, diamond 100, Cu 100 and Ni100 via ion beam assisted electron beam evaporation. Fourier transform infrared spectroscopy and high resolution transmission electron microscopy showed that the total films on Si and diamond consisted of the sequence from the substrate a-BN, h-BN, c-BN. The c-BN layers formed as a function of deposition temperature, ion current and thickness. The occurrence of this layer is attributed to increasing intrinsic biaxial compressive stress generated during deposition. Diamond, Hot wire anemometers, Geometry, Response time, Boron nitride films, a-BN, h-BN, c-BN, Si, Cu, Ni, Diamond, Biaxial compressive stress.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Laminates and Composite Materials
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE