Accession Number:

ADA280586

Title:

Gas-Phase and Surface Chemistry in Electronic Materials Processing. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on November 29-December 2, 1993. Volume 334

Descriptive Note:

Corporate Author:

MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s):

• Mountziaris, T. J.
• Paz-Pujalt, G. R.
• Smith, F. T.
• Westmoreland, P. R.

Report Date:

1994-01-01

Pagination or Media Count:

547.0

Abstract:

The papers are organized in six sections. Part I contains papers on silicon and carbon systems. In addition to papers discussing silicon and silicon oxide deposition it includes several papers on diamond film growth. The chemistry underlying the growth and doping of III-V and II-VI compound semiconductors is covered in Part II together with several studies discussing new precursors. Part III contains papers on metallization. The deposition of dielectric and transitional layers is the topic of Part IV. Par V contains papers on etching of thin films. Finally, Part VI covers special topics, such as deposition on patterned substrates, reactor design, heteroepitaxy and selective epitaxy

Descriptors:

• *MATERIALS
• *PHASE
• *GASES
• *SURFACE CHEMISTRY
• *MICROELECTRONICS
• SYMPOSIA
• PROCESSING
• THIN FILMS
• FILMS
• EPITAXIAL GROWTH
• SEMICONDUCTORS
• METALLIZING
• DOPING
• PATTERNS
• REACTOR SYSTEM COMPONENTS
• SILICON
• OXIDES
• DEPOSITION
• ETCHING
• CARBON
• SUBSTRATES
• DIAMONDS
• DIELECTRICS
• COMPOSITE MATERIALS
• LAYERS

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment
• Laminates and Composite Materials
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE