Accession Number:

ADA280389

Title:

Bistable Vertical-Cavity Surface-Emitting Laser. Structures on GaAs and Si Substrates

Descriptive Note:

Rept. for 1 Jun 1991-31 May 1994

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Personal Author(s):

• Deppe, Dennis G.

Report Date:

1994-06-01

Pagination or Media Count:

12.0

Abstract:

The research performed under this contract centers around the study and development of semiconductor microcavity lasers in the GaAsAlGaAsInGaAs material system. In addition, theoretical modeling is developed to study the influence of small cavities on laser performance. In the course of this work we have developed and studied bistable vertical-cavity surface-emitting lasers VCSELs fabrication processes to realize low-threshold microcavity lasers, and detailed modeling describing the influence which the semiconductor microcavity exerts over the spontaneous emission and lasing characteristics. I believe that our best and most interesting results have been achieved in our last year of funding. Since they build heavily on our earlier two years of research I will focus this final report on these results achieved in the final year.

Descriptors:

• *GALLIUM ARSENIDES
• *SEMICONDUCTOR LASERS
• *SUBSTRATES
• *EMITTANCE
• *BISTABLE DEVICES
• *SILICON
• *SURFACES
• LASER CAVITIES
• WAFERS
• INDIUM
• VERTICAL ORIENTATION
• EMISSION
• ALUMINUM GALLIUM ARSENIDES
• STRUCTURES
• OPTICS
• MODELS

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment
• Lasers and Masers
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE