Accession Number:

ADA280378

Title:

Field Emitter Array RF Amplifier Development Project. Phase 1, Cathode Technology Development

Descriptive Note:

Quarterly progress rept. 9 Aug-31 Dec 1991

Corporate Author:

MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK

Personal Author(s):

Report Date:

1992-01-01

Pagination or Media Count:

11.0

Abstract:

MCNC has theoretically determined the vertical column field emitter approach to be superior to its thin film and wedge emitter approaches for high frequency applications. Calculations indicate that the device transconductance capacitance ratio per cell plays the most significant role in high frequency performance of FEA devices. Masks have been designed and fabricated for the pointed column device structures. A.05 micron gate opening mask has been designed and is being fabricated which will provide approx 1,000,000 tips in a 4x4 mm array and will provide approx. 0.25-0.30 micron gate-to-emitter tip spacing on top of the low capacitance columns. Low capacitance thin film emitter arrays are begin processed for voltage spike protection devices since the small spacings in the thin film devices will induce breakdown at low voltages. Deflection structures and lenses are under consideration for mask set updates. Silicon columns up to 10 microns have been successfully produced. Silicon column arrays have been coated with thick SiO2 and planarized to form circular silicon islands in sea of glass. Processing has begun on the new mask set

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE