Field Emitter Array RF Amplifier Development Project. Phase 1, Option 1
Special technical rept.
MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK
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We have demonstrated anode current modulation at 1 GHz as reported in the special technical report of 31 JAN 94. 80 microns A peak of anode current modulated at 1 GHz was observed with only 2.02 V peak RF modulation on the gate electrode at a DC gate bias voltage of 118 V and DC anode emission current of 1. 8 mA. The bias current is about 2 microns A per tip, which is in the acceptable range for RF amplification suggested in the literature. The measured RF performance is consistent with DC current-voltage measurements shown in the report. This data was collected on a small field emitter device with 1197 tips on 4 micrometer columns in order to minimize the field emitter array cell capacitance. The RF input power level was 0.14 W peak. The measured input impedance of the device at 1 GHz, 28 Omega is quite high, indeed much higher than that reported for competing device structures. We believe that this silicon-based process is easily scalable to larger arrays which should result in net RF gain. We also believe that this demonstration shows that RF modulation of field emitter devices is feasible. Field emission, Cold cathode, RF Amplifier.
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