Accession Number:

ADA280335

Title:

Field Emitter Array RF Amplifier Development Project Phase One, Cathode Technology Development

Descriptive Note:

Quarterly progress rept. no. 2, 1 Jan 1992-31 Mar 1992

Corporate Author:

MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK

Personal Author(s):

• Sune, Ching-Tzong
• Jones, Gary W.

Report Date:

1992-04-01

Pagination or Media Count:

22.0

Abstract:

Key ideas include 1 Develop microstructural field emission diodes with a cutoff frequency above 1 GHz, 5Asq. cm at 200 V G-E bias, and 100 hr lifetime 2 Reduce capacitance and increase transconductance of FEA devices to improve frequency response 3 Evaluate various anode configurations including vacuum microencapsulation to permit testing of larger numbers of sample FEA devices and 4 Model and characterize our versions of the FEA device. Major accomplishments includes 1 Gated field emitter-on-a-column structures with low capacitance have been successfully fabricated 2 Two isotropic silicon emitter etches have been successfully explored 3 Early versions of field emission triodes which have been vacuum micro-encapsulated have been built successfully 4 A microstrip packaging design methodology has been designed to null capacitance in FEAs for narrow band, high frequency applications and 5 Testing of silicon tips with various surface treatments has produced one possible low voltage approx. 10Vhigh transconductance 100 microS FE diode design.

Descriptors:

• *EMITTERS
• *RADIOFREQUENCY AMPLIFIERS
• *COLD CATHODE TUBES
• DIODES
• MICROSTRUCTURE
• INSULATION
• REPORTS
• FABRICATION
• TRIODES
• NOISE(ELECTRICAL AND ELECTROMAGNETIC)
• FIELD EMISSION
• SILICON
• RESONANCE
• GAIN
• ENCAPSULATION

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE