Field Emitter Array RF Amplifier Development Project Phase One, Cathode Technology Development
Quarterly progress rept. no. 2, 1 Jan 1992-31 Mar 1992
MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK
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Key ideas include 1 Develop microstructural field emission diodes with a cutoff frequency above 1 GHz, 5Asq. cm at 200 V G-E bias, and 100 hr lifetime 2 Reduce capacitance and increase transconductance of FEA devices to improve frequency response 3 Evaluate various anode configurations including vacuum microencapsulation to permit testing of larger numbers of sample FEA devices and 4 Model and characterize our versions of the FEA device. Major accomplishments includes 1 Gated field emitter-on-a-column structures with low capacitance have been successfully fabricated 2 Two isotropic silicon emitter etches have been successfully explored 3 Early versions of field emission triodes which have been vacuum micro-encapsulated have been built successfully 4 A microstrip packaging design methodology has been designed to null capacitance in FEAs for narrow band, high frequency applications and 5 Testing of silicon tips with various surface treatments has produced one possible low voltage approx. 10Vhigh transconductance 100 microS FE diode design.
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