Accession Number:

ADA280207

Title:

InTISb for Long-Wavelength Infrared Photodetectors and Arrays.

Descriptive Note:

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

• Razeghi, Manijeh

Report Date:

1994-01-01

Pagination or Media Count:

14.0

Abstract:

The objective of this research program is to grow InTlSb alloys for long-wavelength infrared detectors by low-pressure metalorganic chemical vapor deposition and to investigate their physical properties. As the start towards this goal, optimum growth conditions for high quality InSb epitaxial films on InSb, GaAs, and Si have been determined. InSb films grown under these conditions exhibited one of the best structural and electrical properties reported so far. Growth of InTlSb was then carried out using cyclopentadienylthallium as the source for thallium. This has led to the first successful growth of InTlSb having an extended infrared response. By changing the thallium flow, thallium content was varied and the resulting absorption edge varied from 5.5 micrometers to 9.0 micrometers. For conditions yielding a 9.0 micrometer absorption edge, a thick sample was grown which resulted in a photoconductor having a specific detectivity of D 10exp 9 cmHz sup 122 at 77K and 7 micrometers. These results demonstrate InTlSb as feasible material system for infrared detection.

Descriptors:

• *ARRAYS
• *ALLOYS
• *INFRARED DETECTORS
• *INDIUM
• *LONG WAVELENGTHS
• *PHOTODETECTORS
• *ANTIMONY
• *THALLIUM
• PHYSICAL PROPERTIES
• STRUCTURAL PROPERTIES
• COMPOSITE MATERIALS
• ORGANOMETALLIC COMPOUNDS
• EPITAXIAL GROWTH
• DOPING
• CYCLIC COMPOUNDS
• ANTIMONIDES
• PHOTOVOLTAIC EFFECT
• FOCAL PLANES
• PHOTOCONDUCTORS
• ABSORPTION
• SILICON
• ELECTRICAL PROPERTIES
• SEMICONDUCTORS
• CHEMICAL VAPOR DEPOSITION
• LOW PRESSURE
• GALLIUM ARSENIDES
• FILMS

Subject Categories:

• Inorganic Chemistry
• Electrooptical and Optoelectronic Devices
• Optical Detection and Detectors
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE